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SM12 PDF资料,datasheet技术资料,下载SM12PDF资料,首天伟业!
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  • NO.
  • IC型号
  • 描述
  • 厂家
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  • 文件大小
  • 4
  • SM12T1
  • ON Semiconductor
  • Transient Voltage Suppressor Diode Array,SOT-23 Dual Common Anode Zeners for ESD Protection
  • 8页
  • 51K
  • 8
  • SM12JZ47A
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 329K
  • 9
  • SM12JZ47
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 329K
  • 10
  • SM12J48A
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 291K
  • 11
  • SM12J48
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 291K
  • 12
  • SM12J45A
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 318K
  • 13
  • SM12J45
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 318K
  • 26
  • SM12GZ47A
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 329K
  • 27
  • SM12GZ47
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 329K
  • 28
  • SM12G48A
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 291K
  • 29
  • SM12G48
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 291K
  • 30
  • SM12G45A
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 318K
  • 31
  • SM12G45
  • Toshiba America, Inc.
  • TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
  • 5页
  • 318K
  • 32
  • SM129B1
  • NEC Electronics, Inc.
  • FUSIBLE ALLOY THERMAL SENSITIVE PELLET TYPE, 1 AMPERE RATED CURRENT
  • 8页
  • 73K
  • 33
  • SM129B0
  • NEC Electronics, Inc.
  • FUSIBLE ALLOY THERMAL SENSITIVE PELLET TYPE, 1 AMPERE RATED CURRENT
  • 8页
  • 73K
  • 34
  • SM129A1
  • NEC Electronics, Inc.
  • FUSIBLE ALLOY THERMAL SENSITIVE PELLET TYPE, 2 AMPERES RATED CURRENT
  • 8页
  • 79K
  • 35
  • SM129A0
  • NEC Electronics, Inc.
  • FUSIBLE ALLOY THERMAL SENSITIVE PELLET TYPE, 2 AMPERES RATED CURRENT
  • 8页
  • 79K
  • 36
  • SM12809DT-7.5
  • Enhanced Memory Systems
  • Low Latency PC-133 HSDRAM 128MB DIMM
  • 13页
  • 130K
  • 37
  • SM12809DT-6.6
  • Enhanced Memory Systems
  • CAS2/150MHz HSDRAM 128MB DIMM
  • 12页
  • 153K
  • 38
  • SM12809ALDT-7.5F
  • Enhanced Memory Systems
  • 168-pin Low Latency, Low Profile SDRAM DIMM
  • 14页
  • 176K
  • 39
  • SM12809ALDT-7.5
  • Enhanced Memory Systems
  • 168-pin Low Profile SDRAM DIMM
  • 20页
  • 132K
  • 40
  • SM12808DT-7.5
  • Enhanced Memory Systems
  • Low Latency PC-133 HSDRAM 128MB DIMM
  • 13页
  • 130K
  • 41
  • SM12808DT-6.6
  • Enhanced Memory Systems
  • CAS2/150MHz HSDRAM 128MB DIMM
  • 12页
  • 153K
  • 43
  • SM12808ALDT-7.5F
  • Enhanced Memory Systems
  • 168-pin Low Latency, Low Profile SDRAM DIMM
  • 14页
  • 176K
  • 44
  • SM12808ALDT-7.5
  • Enhanced Memory Systems
  • 168-pin Low Profile SDRAM DIMM
  • 20页
  • 132K
  • 45
  • SM126G1
  • NEC Electronics, Inc.
  • 8页
  • 81K
  • 46
  • SM126G0
  • NEC Electronics, Inc.
  • SEFUSE THERMAL CUTOFF
  • 22页
  • 662K
  • 47
  • SM126G0
  • NEC Electronics, Inc.
  • 8页
  • 81K
  • 48
  • SM126B1
  • NEC Electronics, Inc.
  • FUSIBLE ALLOY THERMAL SENSITIVE PELLET TYPE, 1 AMPERE RATED CURRENT
  • 8页
  • 73K
  • 49
  • SM126B0
  • NEC Electronics, Inc.
  • FUSIBLE ALLOY THERMAL SENSITIVE PELLET TYPE, 1 AMPERE RATED CURRENT
  • 8页
  • 73K
  • 50
  • SM126B0
  • NEC Electronics, Inc.
  • SEFUSE THERMAL CUTOFF
  • 22页
  • 662K
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