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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • MS18R3266AH0-CT9
  • Samsung Semiconductor, Inc.
  • (32M x 18) * 6 pcs SO-RIMM Based on 576 MBit A-die, 32s Banks, 32k/32 ms Refresh, 2.5 V
  • 1页
  • 111K
  • 2
  • MS18R3266AH0-CM8
  • Samsung Semiconductor, Inc.
  • (32M x 18) * 6 pcs SO-RIMM Based on 576 MBit A-die, 32s Banks, 32k/32 ms Refresh, 2.5 V
  • 1页
  • 111K
  • 3
  • MS18R1628MN0-CK8
  • Samsung Semiconductor, Inc.
  • Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V
  • 14页
  • 256K
  • 4
  • MS18R1628EH0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 5
  • MS18R1628EH0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 6
  • MS18R1628EH0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 7
  • MS18R1628DH0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 8
  • MS18R1628DH0-CN9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 9
  • MS18R1628DH0-CM9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 10
  • MS18R1628DH0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 11
  • MS18R1628DH0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 8 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 12
  • MS18R1628AH0-CK8
  • Samsung Semiconductor, Inc.
  • Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V
  • 14页
  • 168K
  • 13
  • MS18R1624MN0-CK8
  • Samsung Semiconductor, Inc.
  • Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V
  • 14页
  • 256K
  • 14
  • MS18R1624EH0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 15
  • MS18R1624EH0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 16
  • MS18R1624EH0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 17
  • MS18R1624DH0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 18
  • MS18R1624DH0-CN9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 19
  • MS18R1624DH0-CM9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 20
  • MS18R1624DH0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 21
  • MS18R1624DH0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 22
  • MS18R1624AH0-CK8
  • Samsung Semiconductor, Inc.
  • Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V
  • 14页
  • 168K
  • 23
  • MS18R1622EH0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 24
  • MS18R1622EH0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 25
  • MS18R1622EH0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 26
  • MS18R1622DH0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 27
  • MS18R1622DH0-CN9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 28
  • MS18R1622DH0-CM9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 29
  • MS18R1622DH0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 30
  • MS18R1622DH0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V
  • 14页
  • 238K
  • 31
  • MS18R1622AH0-CK8
  • Samsung Semiconductor, Inc.
  • Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V
  • 14页
  • 168K
  • 32
  • MS180L80MDS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 33
  • MS180L63MCS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 34
  • MS180L50MCS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 35
  • MS180L40MBS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 36
  • MS180L30MBS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 37
  • MS180L200MFS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 38
  • MS180L160MES
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 39
  • MS180L125MDS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 40
  • MS180L100MDS
  • Partsnic Co., Ltd.
  • Aluminum Electrolytic Capacitor
  • 1页
  • 365K
  • 41
  • MS180
  • Shenzhen Honest Power Tech., Inc.
  • Position Switch
  • 2页
  • 164K
  • 42
  • MS18
  • Mospec Semiconductor Corp.
  • Schottky Barrier Rectifier
  • 3页
  • 294K
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