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  • 51
  • MR18R1624MN1-CK7
  • Samsung Semiconductor, Inc.
  • (16Mx18) x 4 pcs RIMM Module based on 288Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 52
  • MR18R1624MN1-CK7
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 53
  • MR18R1624MN1-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 54
  • MR18R1624MN1-CG6
  • Samsung Semiconductor, Inc.
  • (16Mx18) x 4 pcs RIMM Module based on 288Mb M-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 270K
  • 55
  • MR18R1624EG0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 56
  • MR18R1624EG0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 57
  • MR18R1624EG0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit E-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 58
  • MR18R1624DF0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 59
  • MR18R1624DF0-CN9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 60
  • MR18R1624DF0-CM9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 61
  • MR18R1624DF0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 62
  • MR18R1624DF0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 4 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 63
  • MR18R1624AF1-CN9
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 64
  • MR18R1624AF0-CM9
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 65
  • MR18R1624AF0-CM8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 66
  • MR18R1624AF0-CK8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 67
  • MR18R1624AF0-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 68
  • MR18R1622DF0-CT9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 69
  • MR18R1622DF0-CN9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 70
  • MR18R1622DF0-CM9
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 71
  • MR18R1622DF0-CM8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 72
  • MR18R1622DF0-CK8
  • Samsung Semiconductor, Inc.
  • (16M x 18) * 2 pcs RIMM Module Based on 288 MBit D-die, 32s Banks, 16k/32 ms Ref, 2.5 V
  • 16页
  • 442K
  • 73
  • MR18R1622AF1-CN9
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 74
  • MR18R1622AF0-CM9
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 75
  • MR18R1622AF0-CM8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 76
  • MR18R1622AF0-CK8
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 288Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 77
  • MR18R1622AF0-CG6
  • Samsung Semiconductor, Inc.
  • RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 16页
  • 411K
  • 78
  • MR18R082GBN1-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 16 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 79
  • MR18R082GBN1-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 12 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 80
  • MR18R082GBN1-CG6
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 12 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 81
  • MR18R082GAN1-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 16 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 82
  • MR18R082GAN1-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 16 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 83
  • MR18R082GAN1-CG6
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 16 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 84
  • MR18R082CBN1-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx16) x 12 pcs RIMM Module based on 128Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 85
  • MR18R082CBN1-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 12 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 86
  • MR18R082CBN1-CG6
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 12 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 87
  • MR18R082CAN1-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 12 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 88
  • MR18R082CAN1-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 12 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 89
  • MR18R082CAN1-CG6
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 12 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 90
  • MR18R0828BN1-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 91
  • MR18R0828BN1-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 92
  • MR18R0828BN1-CG6
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 564K
  • 93
  • MR18R0828BM0-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs Mirrored RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 414K
  • 94
  • MR18R0828BM0-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs Mirrored RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 414K
  • 95
  • MR18R0828BM0-CG6
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs Mirrored RIMM Module based on 144Mb B-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 414K
  • 96
  • MR18R0828AN1-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 97
  • MR18R0828AN1-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 98
  • MR18R0828AN1-CG6
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 15页
  • 722K
  • 99
  • MR18R0828AM0-CK8
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs Mirrored RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 391K
  • 100
  • MR18R0828AM0-CK7
  • Samsung Semiconductor, Inc.
  • (8Mx18) x 8 pcs Mirrored RIMM Module based on 144Mb A-die, 32s banks,16K/32ms Ref, 2.5V
  • 14页
  • 391K
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