• 201
• M374S0823DTF-C10
• Samsung Semiconductor, Inc.
• 8M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 9页
• 126K

• 202
• M374S0823CTS-C80
• Samsung Semiconductor, Inc.
• PC100 Unbuffered DIMM(168pin) 4Layer SPD
• 7页
• 62K

• 203
• M374S0823CTS-C1L
• Samsung Semiconductor, Inc.
• PC100 Unbuffered DIMM(168pin) 4Layer SPD
• 7页
• 62K

• 204
• M374S0823CTS-C1H
• Samsung Semiconductor, Inc.
• PC100 Unbuffered DIMM(168pin) 4Layer SPD
• 7页
• 62K

• 205
• M374S0823CTL-C10
• Samsung Semiconductor, Inc.
• 8M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 9页
• 126K

• 206
• M374S0823CTF-C10
• Samsung Semiconductor, Inc.
• 8M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 9页
• 126K

• 207
• M374S0823CT0-C80
• Samsung Semiconductor, Inc.
• 8M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 9页
• 133K

• 208
• M374S0823CT0-C1L
• Samsung Semiconductor, Inc.
• 8M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 9页
• 133K

• 209
• M374S0823CT0-C1H
• Samsung Semiconductor, Inc.
• 8M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD
• 9页
• 133K

• 210
• M374F3280DJ1-C60
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 32M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 20页
• 499K

• 211
• M374F3280DJ1-C50
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 32M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 20页
• 499K

• 212
• M374F3280BJ1-C60
• Samsung Semiconductor, Inc.
• 32M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 21页
• 502K

• 213
• M374F3280BJ1-C50
• Samsung Semiconductor, Inc.
• 32M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 21页
• 502K

• 214
• M374F3200DJ1-C60
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 499K

• 215
• M374F3200DJ1-C50
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 499K

• 216
• M374F3200BJ1-C60
• Samsung Semiconductor, Inc.
• 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 21页
• 502K

• 217
• M374F3200BJ1-C50
• Samsung Semiconductor, Inc.
• 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 21页
• 502K

• 218
• M374F1680DT3-C60
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 219
• M374F1680DT3-C50
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 220
• M374F1680DJ3-C60
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 221
• M374F1680DJ3-C50
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 222
• M374F1680DJ1-C60
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 22页
• 477K

• 223
• M374F1680DJ1-C50
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 22页
• 477K

• 224
• M374F1680BJ1-C60
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 22页
• 476K

• 225
• M374F1680BJ1-C50
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 8K Refresh, 3.3V
• 22页
• 476K

• 226
• M374F1600DT3-C60
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 227
• M374F1600DT3-C50
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 228
• M374F1600DJ3-C60
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 229
• M374F1600DJ3-C50
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 20页
• 469K

• 230
• M374F1600DJ1-C60
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 22页
• 477K

• 231
• M374F1600DJ1-C50
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 22页
• 477K

• 232
• M374F1600BJ1-C60
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 22页
• 476K

• 233
• M374F1600BJ1-C50
• Samsung Semiconductor, Inc.
• 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K Refresh, 3.3V
• 22页
• 476K

• 234
• M374F0883DJ3-C60
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 20页
• 461K

• 235
• M374F0883DJ3-C50
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 20页
• 461K

• 236
• M374F0883DJ1-C60
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 22页
• 466K

• 237
• M374F0883DJ1-C50
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 22页
• 466K

• 238
• M374F0883BT1-C60
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 22页
• 466K

• 239
• M374F0883BT1-C50
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 22页
• 466K

• 240
• M374F0883BJ1-C60
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 22页
• 466K

• 241
• M374F0883BJ1-C50
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K Refresh, 3.3V
• 22页
• 466K

• 242
• M374F0805DT1-C60
• Samsung Semiconductor, Inc.
• Fast EDO Mode without buffer
• 1页
• 13K

• 243
• M374F0805DT1-C50
• Samsung Semiconductor, Inc.
• Fast EDO Mode without buffer
• 1页
• 13K

• 244
• M374F0805BT1-C60
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V
• 22页
• 474K

• 245
• M374F0805BT1-C50
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V
• 22页
• 474K

• 246
• M374F0803DJ3-C60
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 3.3V
• 20页
• 461K

• 247
• M374F0803DJ3-C50
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 3.3V
• 20页
• 461K

• 248
• M374F0803DJ1-C60
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 3.3V
• 22页
• 466K

• 249
• M374F0803DJ1-C50
• Samsung Semiconductor, Inc.
• EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 3.3V
• 22页
• 466K

• 250
• M374F0803BT1-C60
• Samsung Semiconductor, Inc.
• 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K Refresh, 3.3V
• 22页
• 466K

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