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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • BCR1AM-8
  • Mitsubishi Electric Corporation
  • LOW POWER USE PLANAR PASSIVATION TYPE
  • 5页
  • 104K
  • 2
  • BCR1AM-12
  • Renesas Technology America, Inc.
  • Low Power Use Glass Passivation Type Triac
  • 6页
  • 180K
  • 3
  • BCR1AM
  • Mitsubishi Electric Corporation
  • LOW POWER USE GLASS PASSIVATION TYPE TRIAC
  • 5页
  • 62K
  • 4
  • BCR19PN
  • Infineon Technologies Corporation
  • NPN/PNP Silicon Digital Transistor Array
  • 5页
  • 52K
  • 5
  • BCR198W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 6
  • BCR198T
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 112K
  • 7
  • BCR198S
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 115K
  • 8
  • BCR198
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 9
  • BCR196W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 114K
  • 10
  • BCR196
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 11
  • BCR192W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 12
  • BCR192U
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 115K
  • 13
  • BCR192T
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 112K
  • 14
  • BCR192
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 15
  • BCR191W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 16
  • BCR191S
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 114K
  • 17
  • BCR191
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 18
  • BCR189
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 114K
  • 19
  • BCR185W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 20
  • BCR185U
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 44K
  • 21
  • BCR185S
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 115K
  • 22
  • BCR185
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 114K
  • 23
  • BCR183W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 24
  • BCR183U
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 115K
  • 25
  • BCR183T
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 26
  • BCR183S
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 115K
  • 27
  • BCR183
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 28
  • BCR16UM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
  • 5页
  • 55K
  • 29
  • BCR16PM-12
  • Renesas Technology America, Inc.
  • Medium Power Use Insulated Type, Planar Passivation Type Triac
  • 12页
  • 426K
  • 30
  • BCR16PM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 133K
  • 31
  • BCR16HM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
  • 5页
  • 91K
  • 32
  • BCR16E
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
  • 5页
  • 88K
  • 33
  • BCR16CS
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 122K
  • 34
  • BCR16CM
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE TRIAC
  • 11页
  • 128K
  • 35
  • BCR16C
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE
  • 5页
  • 88K
  • 36
  • BCR16B
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE
  • 5页
  • 88K
  • 37
  • BCR16A
  • Mitsubishi Electric Corporation
  • MEDIUM POWER USE NON-INSULATED TYPE
  • 5页
  • 88K
  • 38
  • BCR169W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 39
  • BCR169U
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 115K
  • 40
  • BCR169S
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor Array
  • 4页
  • 114K
  • 41
  • BCR169
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 113K
  • 42
  • BCR166W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 42K
  • 43
  • BCR166
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 42K
  • 44
  • BCR162T
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 42K
  • 45
  • BCR162
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 42K
  • 46
  • BCR158W
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 114K
  • 47
  • BCR158T
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 41K
  • 48
  • BCR158
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 42K
  • 49
  • BCR153U
  • Infineon Technologies Corporation
  • NPN Silicon Digital Transistor
  • 4页
  • 116K
  • 50
  • BCR153
  • Infineon Technologies Corporation
  • PNP Silicon Digital Transistor
  • 4页
  • 43K
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